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Magnetron Sputtering Target

1. magnetron sputtering principle:

An orthorhombic magnetic field and an electric field are applied between the sputtering target (cathode) and the anode, and the required inert gas (usually Ar gas) is charged in the high vacuum chamber. The permanent magnet forms 250 to 350 on the surface of the target material Gaussian magnetic field, with the high voltage electric field composed of orthogonal electromagnetic field. Under the action of electric field, Ar gas ionization into positive ions and electrons, the target with a certain negative pressure, the electrons emitted from the target by the magnetic field and the role of the work of the ionization probability increases in the vicinity of the cathode to form a high density of plasma Body, Ar ions in the role of Lorentz force to accelerate the flight to the target surface, at a high speed bombardment of the target surface, so that the sputtering of the atom to follow the momentum conversion principle with a high kinetic energy from the target fly The substrate is deposited and deposited. Magnetron sputtering is generally divided into two kinds: DC sputtering and RF sputtering, DC splash device which is simple in principle, in the sputtering of metal, its rate is also fast. The use of RF sputtering is more extensive, in addition to sputtering conductive material, but also sputtering non-conductive materials, but also can be reactive sputtering preparation of oxides, nitrides and carbides and other compounds. If the RF frequency increases after the microwave plasma sputtering, and now, commonly used electronic cyclotron resonance (ECR) type microwave plasma sputtering.

2. magnetron sputtering target types:

Metal sputtering coating target, alloy sputtering coating target, ceramic sputtering coating target, boride ceramic sputtering target, carbide ceramic sputtering target, fluoride ceramic sputtering target, nitride ceramic sputtering Target, oxide ceramic target, selenide ceramic sputtering target, silicide ceramic sputtering target, sulfide ceramic sputtering target, telluride ceramic sputtering target, other ceramic target, chrome-doped Silicon ceramic target (Cr-SiO), indium phosphate target (InP), lead arsenide target (PbAs), indium arsenide target (InAs).